2SJ681
Description
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2SJ681
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
2SJ681
Relay Drive, DC−DC Converter and Motor Drive Applications
６．５±０．２ ５．２±０．２ １．５±０．２
Unit: mm
０．６ MAX．
z High forward transfer admittance: |Yfs| = 5.
0 S (typ.
) z Low leakage current: IDSS = −100 µA (max) (VDS = −60 V) z Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA)
１．６
z Low drain−source ON resistance: RDS (ON) = 0.
12 Ω (typ.
)
０．９
５．５±０．２
z 4-V gate drive
１．１±０．２
４．１±０．２
５．７
０．６ MAX
２．３
２．３ ２．３±０．２ ０．６±０．１５ ０．６±０．１５
１
２
３
Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalenche energy (Note 3) Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −60 −60 ±20 −5 −20 20 40.
5 −5 2 150 −55~150 Unit V V V A A W mJ A mJ °C °C
０．８ MAX． １．1 MAX．
Pulse(Note 1)
JEDEC JEITA TOSHIBA
― ― 2-7J2B
Weight: 0.
36 g (typ.
)
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 6.
25 125 Unit °C / W °C / W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.
2 mH, RG = 25 Ω, IAR = −5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2006-06-30
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2SJ681
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on tim...
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