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BU100
Silicon NPN Power Transistors
Description
isc Silicon
NPN
Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 3.3V(Max.)@ IC= 8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of CTV receivers and high voltage,fast s...
Inchange Semiconductor
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