High-Voltage Trench MOS Barrier Schottky Rectifier
Description
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V30120SG, VF30120SG, VB30120SG, VI30120SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.
47 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
2 V30120SG
PIN 1 PIN 2 CASE
3 1 VF30120SG
PIN 1 PIN 2
2
3
1
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
PIN 3
PIN 3
TO-263AB K K
TO-262AA
A NC 1 VB30120SG
NC A K HEATSINK
2
3
VI30120SG
PIN 1 PIN 2 K
MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum
PIN 3
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max.
30 A 120 V 220 A 0.
81 V 150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C Voltage rate of change (rated VR) Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range SYMBOL VRRM IF(AV) IFSM EAS IRRM dV/dt VAC TJ, TSTG V30120SG VF30120SG VB30120SG 1...
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