NPN Transistor - Toshiba Semiconductor
Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2236
Audio Power Amplifier Applications
2SC2236
Unit: mm
• Complementary to 2SA966 and 3-watt output applications.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1.
5
A
Base current
IB
0.
15
A
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note1: Using continuously under heavy loads (e.
g.
the application of high
JEDEC
TO-92MOD
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
TOSHIBA
2-5J1A
operating temperature/current/voltage, etc.
) are within the
Weight: 0.
36 g (typ.
)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report
and estimated failure rate, etc).
1
2009-12-21
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 30 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
V (BR) EBO IE = 1 mA, IC = 0
hFE (Note 2)
VCE = 2 V, IC = 500 mA
VCE (sat) IC = 1.
5 A, IB = 0.
03 A
VBE
VCE = 2 V, IC = 500 mA
fT
VCE = 2 V, IC = 500 mA
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Note 2: hFE classification O: 100 to 200, Y: 160 to 320
Marking
2SC2236
Min Typ.
Max Unit
―
―
100
nA
―
―
100
nA
30
―
―
V
5
―
―
V
100
―
3...
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