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2SC2235

Toshiba Semiconductor

TRANSISTOR - Toshiba Semiconductor


2SC2235
2SC2235

PDF File 2SC2235 PDF File



Description
2SC2235 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2235 Audio Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm • Complementary to 2SA965.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 800 80 900 150 −55 to 150 Unit V V V mA mA mW °C °C JEDEC TO-92MOD JEITA ― Note1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in TOSHIBA 2-5J1A temperature, etc.
) may cause this product to decrease in the Weight: 0.
36 g (typ.
) reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2009-12-21 Free Datasheet http://www.
Datasheet4U.
com 2SC2235 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO V (BR) EBO hFE (Note 2) VCE (sat) VBE fT Cob Test Condition VCB = 120 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 IE = 1 mA, IC = 0 VCE = 5 V, IC = 100 mA IC = 500 mA, IB = 50 mA VCE = 5 V, IC = 500 mA VCE = 5 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 120 5 80 ― ― ― ― Typ.
― ― ― ― ― ― ― 120 ― Max 100 100 ― ― 240 1.
0 1.
0 ― 30 V V MHz pF Unit nA nA V V Note 2: hFE classification O: 80 to 160, Y: 120 to 240 M...



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