NPN Transistor - Toshiba Semiconductor
Description
2SC2229
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC2229
Black and White TV Video Output Applications High-Voltage Switching Applications Driver Stage Audio Amplifier Applications
Unit: mm
• High breakdown voltage: VCEO = 150 V (min) • Low output capacitance: Cob = 5.
0 pF (max) • High transition frequency: fT = 120 MHz (typ.
)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
200
V
150
V
5
V
50
mA
20
mA
800
mW
150
°C
−55 to 150
°C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.
36 g (typ.
)
Note1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1
2009-12-21
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
ICBO
VCB = 200 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE VCE = 5 V, IC = 10 mA
(Note 2)
VCE (sat) IC = 10 mA, IB = 1 mA
VBE (sat) fT Cob
IC = 10 mA, IB = 1 mA VCE = 30 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz
Note 2: hFE classification O: 70 to 140, Y: 120 to 240
Marking
2SC2229
Min Typ.
Max Unit
―
―
0.
1
μA
―
―
0.
1
μA...
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