Silicon NPN Transistor - Toshiba Semiconductor
Description
2SC2216,2SC2717
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC2216,2SC2717
TV Final Picture IF Amplifier Applications
Unit: mm
· High gain: Gpe = 33dB (typ.
) (f = 45 MHz) · Good linearity of hFE.
Maximum Ratings (Ta = 25°C)
Characteristics
2SC2216 Collector-base voltage
2SC2717
Collector-emitter voltage
2SC2216 2SC2717
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO IC IE PC Tj Tstg
Rating
50 30 45 25 4 50 -50 300 125 -55~125
Unit
V
V
V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1E
Weight: 0.
21 g (typ.
)
Characteristics
2SC2216 Collector cut-off current
2SC2717
Emitter cut-off current
Collector-emitter breakdown voltage
2SC2216 2SC2717
DC current gain
2SC2216 2SC2717
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Collector-base time constant
Transition frequency
Power gain (Figure 1)
2SC2216 2SC2717
Symbol ICBO IEBO
Test Condition
VCB = 50 V, IE = 0 VCB = 30 V, IE = 0 VEB = 3 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE VCE = 12.
5 V, IC = 12.
5 mA
VCE (sat) VBE (sat)
Cob Cc･rbb’
fT
Gpe
IC = 15 mA, IB = 1.
5 mA IC = 15 mA, IB = 1.
5 mA VCB = 10 V, IE = 0, f = 30 MHz VCB = 10 V, IE = -1 mA, f = 30 MHz VCE = 12.
5 V, IC = 12.
5 mA
VCC = 12.
5 V, IE = -12.
5 mA, f = 45 MHz
Min Typ.
Max Unit
¾ ¾ 0.
1 mA
¾ ¾ 0.
1 mA
45 ¾ ¾ 25 ¾ ¾
V
40 ¾ 140
40 ¾ 240
¾ ¾ 0.
2 V
¾ ¾ 1.
5 V
0.
8 ¾ 2.
0 pF
¾ ¾ 25 ps
300 ¾
¾ MHz
29 ¾ 36 dB
28 ¾ 36
1 2003-03-27
2SC2216,2SC2717
Figure 1 45 MHz Gpe Test Circuit
2 2003-03-27
2SC2216,2SC2717
3 2003-03-27
2SC2216,2SC2717
4 2003-03-27
2SC2216,2SC2717
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an...
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