N-channel Silicon Junction FET
Description
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Ordering number : ENN7698A
TF208TH
N-channel Silicon Junction FET
TF208TH
Features
• • • • •
Electret Condenser Microphone Applications
Ultrasmall package facilitates miniaturization in end products.
Especially suited for use in electret condenser microphone for audio equipments and telephones.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C
Electrical Characteristics at Ta=25°C (Value per element)
Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDO VGS(off) IDSS yfs Ciss Crss Conditions IG=-100µA VDS=2V, ID=1µA VDS=2V, VGS=0V VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz Ratings min --20 --0.
1 140* 0.
5 1.
4 5.
0 1.
1 --2.
0 --0.
6 --2.
0 --1.
0 --1.
0 350* typ max Unit V V µA mS pF pF dB dB dB
VDS=2V, VGS=0V, f=1MHz [Ta=25˚C, VCC=2.
0V, RL=2.
2kΩ, Cin=5pF, See specified Test Circuit.
] Voltage Gain GV VIN=10mV, f=1kHz Reduced Voltage Characteristic Frequency Characteristic ∆GVV ∆GVf VIN=10mV, f=1kHz, VCC=2.
0→1.
5V f=1kHz to 110Hz
Continued on next page.
* : The TF208TH is classified by IDSS as follows : (unit : µA) Rank B4 B5 IDSS 140 to 240 210 to 350
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein...
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