PNP Transistor - Toshiba Semiconductor
Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SC1959
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
2SC1959
Unit: mm
· Excellent hFE linearity: hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA · 1 watt amplifier applications.
· Complementary to 2SA562TM.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
35 30 5 500 100 500 150 -55~150
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO IEBO
VCB = 35 V, IE = 0 VEB = 5 V, IC = 0
hFE (1) VCE = 1 V, IC = 100 mA
(Note)
hFE (2) VCE = 6 V, IC = 400 mA
(Note)
VCE (sat) VBE fT Cob
IC = 100 mA, IB = 10 mA VCE = 1 V, IC = 100 mA VCE = 6 V, IC = 20 mA VCB = 6 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400 hFE (2) classification O: 25 (min), Y: 40 (min)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.
21 g (typ.
)
Min Typ.
Max Unit ¾ ¾ 0.
1 mA ¾ ¾ 0.
1 mA
70 ¾ 400
25 ¾ ¾
¾ 0.
1 0.
25 V ¾ 0.
8 1.
0 V ¾ 300 ¾ MHz ¾ 7 ¾ pF
1 2003-03-24
2SC1959
2 2003-03-24
2SC1959
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOS...
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