Silicon NPN Transistor - Toshiba Semiconductor
Description
2SC1923
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC1923
High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications
Unit: mm
· Small reverse transfer capacitance: Cre = 0.
7 pF (typ.
) · Low noise figure: NF = 2.
5dB (typ.
) (f = 100 MHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
40 30 4 20 4 100 125 -55~125
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.
21 g (typ.
)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current
DC current gain
Reverse transfer capacitance Transition frequency Collector-base time constant Noise figure Power gain
ICBO IEBO
VCB = 18 V, IE = 0 VEB = 4 V, IC = 0
hFE VCE = 6 V, IC = 1 mA
(Note)
Cre fT Cc･rbb’ NF Gpe
VCE = 6 V, f = 1 MHz VCE = 6 V, IC = 1 mA VCE = 6 V, IE = -1 mA, f = 30 MHz
VCE = 6 V, IE = -1 mA, f = 100 MHz, Figure 1
Note: hFE classification R: 40~80, O: 70~140, Y: 100~200 (* NF = 5.
0dB max)
Min Typ.
Max Unit
¾ ¾ 0.
5 mA ¾ ¾ 0.
5 mA
40 ¾ 200
¾ 0.
70 ¾
pF
¾ 550 ¾ MHz
¾ ¾ 30 ps
¾ 2.
5 4.
0* dB
15 18 ¾ dB
1 2003-03-19
2SC1923
L1: 0.
8 mmf silver plated copper wire, 4 T, 10ID, 8 LENGTH
Figure 1 NF, Gpe Test Circuit
y Parameter (typ.
)
(1) Common emitter (VCE = 6 V, IE = -1 mA, f = 100 MHz)
Characteristics
Symbol
Typ.
Unit
Input conductance Input capacitance
Reverse transfer admittance
Phase angle of reverse transfer admittance
Forward transfer admittance
Phase angle of forward transfer admittance
Output conductance
Output capacitance
gie Cie ïyreï qre
|yfe| qfe
goe Coe
2.
9 10.
2 0.
33 -90 40 -20 45 1.
1
mS pF mS °
mS ° mS pF
(2) Common base (VCE = 6 V, IE = -1 mA, f = 100 MHz)
Characteristics
Symbol
Typ.
Unit
Input conductance Input cap...
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