Silicon NPN Transistor - Toshiba Semiconductor
Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815
Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications
2SC1815
Unit: mm
High voltage and high current:
VCEO = 50 V (min), IC = 150 mA (max)
• Excellent hFE linearity: hFE (2) = 100 (typ.
)
at VCE = 6 V, IC = 150 mA
: hFE (IC = 0.
1 mA)/hFE (IC = 2 mA)
= 0.
95 (typ.
)
• Low noise: NF = 1dB (typ.
) at f = 1 kHz
• Complementary to 2SA1015 (O, Y, GR class)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current Base current Collector power dissipation
IC
150
mA
IB
50
mA
JEDEC
TO-92
PC
400
mW
JEITA
SC-43
Junction temperature Storage temperature range
Tj
125
°C
Tstg
−55~125
°C
TOSHIBA
2-5F1B
Weight: 0.
21 g (typ.
)
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Base intrinsic resistance
Noise figure
Symbol
Test Condition
ICBO
VCB = 60 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE (1)
VCE = 6 V, IC = 2 mA
(Note)
hFE (2) VCE = 6 V, IC = 150 mA
VCE (sat) IC = 100 mA, IB = 10 mA
VBE (sat) IC = 100 mA, IB = 10 mA
fT
V...
Similar Datasheet