|
Part Number
|
2SB905 |
|
Manufacturer
|
Toshiba Semiconductor |
|
Description
|
PNP Transistor |
|
Datasheet
|
 2SB905 PDF File
|
Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SB905
2SB905
Power Amplifier Applications
• Complementary to SD1220
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
−150 −150
−6 −1.
5 −1.
0 1.
0 10 150 −55 to 150
V V V A A
W
°C °C
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.
36 g (typ.
)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.
36 g (typ.
)
1 2006-11-21
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = −150 V, IE = 0
IEBO
VEB = −6 V, IC = 0
V (BR) CEO IC = −10 mA, IB = 0
hFE (Note)
VCE = −5 V, IC = −200 mA
VCE (sat) VBE fT Cob
IC = −500 mA, IB = −50 mA VCE = −5 V, IC = −5 mA VCE = −5 V, IC = −200 mA VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE classification R: 60 to 120, O: 100 to 200, Y: 160 to 320
Marking
2SB905
Min
― ― −150
Typ.
― ― ―
Max
−1.
0 −1.
0 ―
Unit
μA μA V
60 ― 320
― ― −1.
5 V −0.
5 ― −0.
8 V 15 50 ― MHz ― ― 35 pF
...
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