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2SB1667

Part Number	2SB1667
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) 2SB1667(SM) Audio Frequency Power Amplifier Applicatio...
Datasheet	2SB1667 PDF File

Overview

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) 2SB1667(SM) Audio Frequency Power Amplifier Applications Unit: mm • Low saturation voltage: VCE (sat) = −1.
7 V (max) (IC = −3 A, IB = −0.
3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB PC −60 −60 −7 −3 −0.
5 1.
5 25 V V V A A W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note1: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-10S2A ...

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