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2SB1481

Toshiba Semiconductor
Part Number 2SB1481
Manufacturer Toshiba Semiconductor
Description TRANSISTOR
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications 2SB1481 Unit: mm • High DC current gain: ...
Datasheet PDF File 2SB1481 PDF File

2SB1481
2SB1481

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications 2SB1481 Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1.
5 A) • Low saturation voltage: VCE (sat) = −1.
5 V (max) (IC = −3 A) • Complementary to 2SD2241 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −100 V Emitter-base voltage VEBO −5 V Collector current DC IC ±4 A Pulse ICP ±6 Base current IB −0.
3 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.
0 W 25 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA SC-67 TOSHIBA 2-1...


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