OptiMOS -T PN Half Bridge
Description
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DataSheet.
co.
kr
BTS7904B
OptiMOS® -T PN Half Bridge
Product Summary P V DS -30 12.
7 -40 N 55 11.
7 40 V mΩ A
Features • Dual p- and n-channel MOSFET • Automotive AEC Q101 qualified • Green package (RoHS compliant) • Ultra low R DS(on) • 150 °C operating temperature
R DS(on),max5) ID
PG-TO263-5-1
Type BTS7904B
Package PG-TO263-5-1
Marking 7904B
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions P Continuous drain current1) ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS IAS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=±20 A -40 -40 -160 350 -40 -16 / +5 96 -55 .
.
.
150 55/150/56 Value N 40 40 160 200 40 +16 / -163) 69 mJ A V W °C A Unit
1.
0
page 1
2008-07-18
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BTS7904B
Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction case SMD version, device on PCB P R thJC N R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage P V (BR)DSS V GS=0 V, I D=-1 mA N Gate threshold voltage P V GS(th) N Zero gate voltage drain current P I DSS V GS=0 V, I D=1 mA V DS=V GS, I D=-70 µA V DS=V GS, I D=40 µA V DS=-18 V, V GS=0 V, T j=25 °C V DS=-18 V, V GS=0 V, T j=125 °C N V DS=18 V, V GS=0 V, T j=25 °C V DS=18 V, V GS=0 V, T j=125 °C Gate-source leakage current P I GSS N Drain-source on-state resistance5) P R DS(on) N P N V GS=-16 V, V DS=0 V V GS=16 V, V DS=0 V V GS=-10 V, I D=-20 A V GS=10 V, I D=20 A V GS=-4.
5 V, I D=-12.
5 A V GS=4.
5 V, I D=20 A -30 55 -1 1.
2 -1.
5 1.
7 -0.
01 -2.
1 2.
2 -1 µA V 1.
3 1.
8 62 45 K/W Values typ.
max.
Unit
-
-1
-100
-
0.
01
1
-
1 -10 1 6.
9 9.
4 17.
2 16.
5
100 -100 100 12.
7 11.
7 20.
7 20.
2 mΩ nA
1.
0
page 2
2008-...
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