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2SB1375

Part Number	2SB1375
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm • Low sat...
Datasheet	2SB1375 PDF File

Overview

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm • Low saturation voltage: VCE (sat) = −1.
5 V (max) (IC = −2 A, IB = −0.
2 A) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin • Complementary to 2SD2012 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −60 −60 −7 −3 −0.
5 2.
0 25 150 −55 to 150 V V V A A W °C °C JEDEC ― ...

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