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2SB1067

Toshiba Semiconductor
Part Number 2SB1067
Manufacturer Toshiba Semiconductor
Description PNP Transistor
Published Mar 22, 2005
Detailed Description 2SB1067 TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor) 2SB1067 Micro-Moter Drive, Hammer D...
Datasheet PDF File 2SB1067 PDF File

2SB1067
2SB1067

Overview
2SB1067 TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor) 2SB1067 Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Industrial Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.
5 V (max) (IC = −1 A, IB = −1 mA) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −80 −80 −8 −2 −0.
5 ...


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