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2SB1020A

Part Number	2SB1020A
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power) 2SB1020A High-Power Switching Applicati...
Datasheet	2SB1020A PDF File

Overview

2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power) 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.
5 V (max) (IC = −3 A) • Complementary to 2SD1415A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg −100 −100 −5 −7 −10 −0.
7 2.
0 30 15...

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