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2SB1015A

Toshiba Semiconductor
Part Number 2SB1015A
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications · ...
Datasheet PDF File 2SB1015A PDF File

2SB1015A
2SB1015A

Overview
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications · Low collector saturation voltage: VCE (sat) = −1.
7 V (max) (IC = −3 A, IB = −0.
3 A) · Collector power dissipation: PC = 25 W (Tc = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -60 -60 -7 -3 -0.
5 2.
0 25 150 -55~150 Unit V V V A A W °C °C Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.
7 g (typ.
) 1 2003-...


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