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2SA966

Part Number	2SA966
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA966 Audio Power Amplifier Applications 2SA966 Unit: mm ...
Datasheet	2SA966 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA966 Audio Power Amplifier Applications 2SA966 Unit: mm • Complementary to 2SC2236 and 3-W output applications.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −30 −30 −5 −1.
5 -0.
15 900 150 −55 to 150 V V V A A mW °C °C Note1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product ...

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