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2SA965

Part Number	2SA965
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA965 Power Amplifier Applications Driver-Stage Amplifier A...
Datasheet	2SA965 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA965 Power Amplifier Applications Driver-Stage Amplifier Applications 2SA965 Unit: mm • Complementary to 2SC2235.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB -80 mA Collector power dissipation PC 900 mW Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC TO-92MOD Note1: Using continuously under heavy loads (e.
g.
the application of high JEITA ― temperature/current/voltage and the signi...

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