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2SA817A

Part Number	2SA817A
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA817A Driver-Stage Amplifier Applications Voltage Amplifie...
Datasheet	2SA817A PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA817A Driver-Stage Amplifier Applications Voltage Amplifier Applications 2SA817A Unit: mm • Complementary to 2SC1627A.
• Driver stage application of 30 to 35 watts amplifiers.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IE PC Tj Tstg −80 −80 −5 −400 400 800 150 −55 to 150 V V V mA mA mW °C °C JEDEC TO-92MOD Note: Using continuously under heavy loads (e.
g.
the application of high JEITA ― temper...

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