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2SA562TM

Part Number	2SA562TM
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA562TM 2SA562TM Audio Frequency Low Power Amplifier Appl...
Datasheet	2SA562TM PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA562TM 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm · Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA · 1 watt amplifier application.
· Complementary to 2SC1959.
Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -35 -30 -5 -500 -100 500 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta =...

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