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2SA2097

Part Number	2SA2097
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications 2SA...
Datasheet	2SA2097 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications 2SA2097 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = −0.
5 A) • Low collector-emitter saturation: VCE (sat) = −0.
27 V (max) • High-speed switching: tf = 55 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −7 V Collector current DC IC Pulse ICP −5 A −10 Base current IB −0.
5 A Collector power dissipation Ta = 25°C PC Tc = 25°C 1 W JEDEC 20 JEITA ― ― Junction temperature Storage temperature range Tj 150 ...

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