High Voltage Fast-Switching NPN Power Transistor
Description
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SB F13007-O SBF
High Voltage Fast-Switching NPN Power Transistor
Features
◆ ◆ ◆ ◆ Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Isolation Voltage ( VISO = 4000V AC )
B C
General Description
This device is designed for high voltage, High speed switching characteristics required such as lighting system ,switching mode power supply.
E
TO220F
Absolute Maximum Ratings
Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.
0 8.
0 16 4.
0 8.
0 40 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃
Tc: Case temperature (good cooling)
Thermal Characteristics
Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 3.
13 62.
5 Units ℃/W ℃/W
Jan 2008.
Rev.
0
Copyright@WinSemi Semiconductor Co.
,Ltd.
,All rights reserved.
T03-3
F13007-O SB SBF
Electrical Characteristics (TC=25℃ unless otherwise noted)
Value Parameter Collector-Emitter Breakdown Voltage Test Conditions Ic=10mA,Ib=0 Ic=2.
0A,Ib=0.
4A Ic=5.
0A,Ib=1.
0A VCE(sat) Collector-Emitter Saturation Voltage Ic=8.
0A,Ib=2.
0A Ic=5.
0A,Ib=1.
0A Tc=100℃ Ic=2.
0A,Ib=0.
4A VBE(sat) Base-Emitter Saturation Voltage Ic=5.
0A,Ib=1.
0A Ic=5.
0A,Ib=1.
0A Tc=100℃ ICBO IEBO Collector-Base Cutoff Current (Vbe=-1.
5V) Emitter -Base Cutoff Current Vcb=700V Vcb=700V, Tc=100℃ Veb=9V Vce=5V,Ic=2.
0A Vce=5V, Ic=5.
0A fT ton ts tf
Current Gain Bandwidth Product VCE = 10V, IC = 0.
5A
Symbol VCEO(sus)
Min 400
Typ -
Max 1.
0
Units V
-
-
2.
0 3.
0
V
-
-
2.
5 1.
2 1.
6 1.
5 1.
0 5.
0 1.
0 40 40
V
-
-
V
-
-
V
10 5
-
mA mA
hFE
DC Current Gain
4
MHz
Tum on Time Storage Time Fall Time
VCC=125V ,Ic=5A IB1=IB2=-1.
0A RL=50Ω
-
-
1.
6 3.
0 0.
7
㎲
Note: Pulse Test : Pulse widt...
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