NPN Transistor
Description
PROCESS
Smal Signal Transistor
CP392V
NPN - Amp/Switch Transistor Chip
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PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 93,826 PRINCIPAL DEVICE TYPES 2N3904 CMKT3904 CMLT3904E CMPT3904 CMPT3904E CMST3904 CXT3904 CZT3904
R0
EPITAXIAL PLANAR 11 x 11 MILS 7.
1 MILS 3.
7 x 3.
7 MILS 3.
7 x 3.
7 MILS Al - 30,000Å Au - 12,000Å
BACKSIDE COLLECTOR
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PROCESS
CP392V
Typical Electrical Characteristics
R2 (13-May 2010)
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