DatasheetsPDF.com

2SK3656

Part Number	2SK3656
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Apr 27, 2011
Detailed Description	2SK3656 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3656 VHF- and UHF-band Amplifier Applications Uni...
Datasheet	2SK3656 PDF File

Overview

2SK3656 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3656 VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.
These TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.
• • • Output power: PO =28.
4dBmW (typ) Gain: GP = 15.
4dB (typ) Drain efficiency: ηD = 64% (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel tem...

Similar Datasheet

2SK360 N-Channel MOSFET - Hitachi Semiconductor
2SK3600-01L N-CHANNEL SILICON POWER MOSFET - Fuji Electric
2SK3600-01S N-CHANNEL SILICON POWER MOSFET - Fuji Electric
2SK3600-01SJ N-CHANNEL SILICON POWER MOSFET - Fuji Electric
2SK3600L N-Channel MOSFET Transistor - Inchange Semiconductor
2SK3600S N-Channel MOSFET Transistor - Inchange Semiconductor
2SK3601-01 N-CHANNEL SILICON POWER MOSFET - Fuji Electric
2SK3602-01 N-Channel MOSFET Transistor - Inchange Semiconductor
2SK3602-01 N-CHANNEL SILICON POWER MOSFET - Fuji Electric
2SK3603-01MR N-Channel MOSFET Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)