N-channel Enhancement-mode Power MOSFET
Description
SSM40T03GH,J
N-channel Enhancement-mode Power MOSFET
Low gate-charge Simple drive requirement Fast switching
Pb-free; RoHS compliant.
D
BV DSS R DS(ON) ID
30V 25mΩ 28A
G S
DESCRIPTION
The SSM40T03GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters.
The through-hole version, the SSM40T03GJ in TO-251, is available for low-footprint vertical mounting.
These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.
G D S G D S
TO-252 (H)
TO-251 (J)
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 30 ± 25 28 24 95 31.
25 0.
25 -55 to 150 -55 to 150
Units V V A A A W W/°C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
THERMAL DATA
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Symbol
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 4 110
Unit °C/W °C/W
Rthj-c Rthj-a
2/16/2005 Rev.
2.
1
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1 of 5
SSM40T03GH,J
ELECTRICAL CHARACTERISTICS @ Tj= 25°C (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
30 1 Typ.
0.
032
Max.
Units 25 45 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
∆ BV DSS/∆ Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance
VGS=10V, ID=18A VGS=4.
5V, ID=14A
15 8.
8 2.
5 5.
8 6 62 16 4.
4 655 145 95
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=18A VDS=3...
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