Power-Transistor
Description
IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO-263) ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
IPI041N12N3 G IPB038N12N3 G
120 V 3.
8 mW 120 A
Type
IPB038N12N3 G IPI041N12N3 G
IPP041N12N3 G
Package Marking
PG-TO263-3 038N12N
PG-TO262-3 041N12N
PG-TO220-3 041N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=100 A, R GS=25 W
Gate source voltage 4)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
120 120 480 900 ±20 300 -55 .
.
.
175 55/175/56
Unit A
mJ V W °C
Rev.
2.
3
page 1
2014-04-15
IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance,
R thJA minimal footprint
-
junction - ambient
6 cm2 cooling area5)
-
-
0.
5 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
120
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=270 µA
2
3
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V, T j=25 °C
-
0.
1
-V 4
1 µA
Gate-source leakage current Drain-source on-state resistance
Gate resistance Transconductance
V DS=100 V, V GS=0 V, T j=125 °C
-
I GSS
V GS=20 V, V DS=0 V
-
R DS(on) V GS=10 V, I D=100 A
-
V GS=10 V, I D=100 A,
-
TO263
RG
-
g fs
|V DS|>2|I D|R DS(on)max, I D=100 A
83
10
100
...
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