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A1942

Part Number	A1942
Manufacturer	Toshiba Semiconductor
Description	2SA1942
Published	Feb 5, 2011
Detailed Description	2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type www.DataSheet4U.com 2SA1942 Power Amplifier Applications • ...
Datasheet	A1942 PDF File

Overview

2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type www.
DataSheet4U.
com 2SA1942 Power Amplifier Applications • • • High breakdown voltage: VCEO = −160 V (min) Complementary to 2SC5199 Recommended for 80-W high-fidelity audio frequency amplifier output stage Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −160 −160 −5 −12 −1.
2 120 150 −55 to 150 Unit V V V A A W JEDEC °C °C ― ― JEITA TOSHIBA 2-21F1A Note: Using continuously under heav...

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