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A1932

Toshiba Semiconductor
Part Number A1932
Manufacturer Toshiba Semiconductor
Description 2SA1932
Published Nov 6, 2010
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1932 Power Amplifier Applications Driver Stage Amplifier Applications ...
Datasheet PDF File A1932 PDF File

A1932
A1932

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1932 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1932 Unit: mm • High transition frequency: fT = 70 MHz (typ.
) • Complementary to 2SC5174 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −230 V Collector-emitter voltage VCEO −230 V Emitter-base voltage VEBO −5 V Collector current IC −1 A Base current IB −0.
1 A Collector power dissipation Junction temperature Storage temperature range PC 1.
8 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-10T1A temperature...


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