NPN Silicon Epitaxial Planar Transistor
Description
MMBT8050
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
As complementary type the PNP transistor MMBT8550 is recommended.
www.
DataSheet4U.
com
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 40 25 6 600 350 150 - 55 to + 150
Unit V V V mA mW
O
C C
O
Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA
at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 35 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Gain Bandwidth Product at VCE = 5 V, IC = 10 mA
Symbol MMBT8050C MMBT8050D hFE hFE hFE ICBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) fT
Min.
100 160 40 40 25 6 -
Typ.
100
Max.
250 400 100 0.
5 1.
2 -
Unit nA V V V V V MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 11/04/2008
MMBT8050
www.
DataSheet4U.
com
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 11/04/2008
...
Similar Datasheet