Schottky Barrier Diode
Description
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Schottky Barrier Diode
RB056L-40
Applications General rectification Dimensions(Unit : mm) Land size figure(Unit : mm) 2.
0 2.
0 Features 1)Small power mold type.
(PMDS) 2)Low IR 3)High reliability
PMDS
Construction Silicon epitaxial planer
Structure
Taping specifications(Unit : mm)
4.
0±0.
1 2.
0±0.
05 φ1.
55±0.
05 1.
75±0.
1 0.
3
5.
5±0.
05
φ1.
55 2.
9±0.
1 4.
0±0.
1 2.
8MAX
Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) Junction temperature Storage temperature (*1)Mounting on epoxi board.
(Tc=63CMAX.
) Electrical characteristics (Ta=25℃) Parameter Forward voltage Reverse current
Symbol VRM VR Io IFSM Tj Tstg
Limits 40 40 3 70 150 -40to+150
5.
3±0.
1 0.
05 9.
5±0.
1
Unit V V A A
C C
12±0.
2
Symbol VF1 VF2 IR
Min.
-
Typ.
-
Max.
0.
67 0.
58 50
Unit V V A
Conditions IF=3.
0A IF=2.
0A VR=40V
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1/3
2010.
02 - Rev.
A
4.
2
RB056L-40
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Data Sheet
Electrical characteristics curves
1000
10000 Ta=75 C Ta=125 C Ta=-25 C 1000
Ta=150 C
1000 Ta=125 C CAPACIT ANCE BETWEEN TERMINALS : Ct(pF) f=1MHz
FORWARD CURRENT : IF(mA)
REVERSE CURRENT : IR(A)
100
Ta=150 C
Ta=25 C
100 10
Ta=75 C
100
Ta=25 C 1 Ta=-25 C 0.
1 0.
01
10
10
1 0 100 200 300 400 500 600
1 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 REVERSE VOLTAGE : V R(V) VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS
REVERSE VOLTAGE : V R(V) VR-IR CHARACTERISTICS
480 FORWARD VOLTAGE : VF(mV) Ta=25 C IF=1A n=30pcs
20 Ta=25 C VR=40V n=30pcs
0.
3 Ta=25 C f=1MHz VR=0V n=30pcs
REVERSE CURRENT : IR(uA)
470
CAPACITANCE BETWEEN TERMINAL : Ct(nF)
0.
29
460
0.
28
10
450 AVE:454.
3mV 440
0.
27 AVE : 0.
281nF
0.
26
AVE : 4.
08 A 430 0 0.
25 Ct DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP
200
Ifsm
30 1cyc 8.
3m RESERVE RECOVERY TIME : trr(ns) 25 20 15...
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