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SSM6K211FE

Toshiba Semiconductor
Part Number SSM6K211FE
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Jul 21, 2010
Detailed Description SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ) SSM6K211FE ○ High-Speed Switching Applic...
Datasheet PDF File SSM6K211FE PDF File

SSM6K211FE
SSM6K211FE

Overview
SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ) SSM6K211FE ○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.
5-V drive • Low ON-resistance: Ron = 118 mΩ (max) (@VGS = 1.
5 V) Ron = 82 mΩ (max) (@VGS = 1.
8 V) Ron = 59 mΩ (max) (@VGS = 2.
5 V) Ron = 47 mΩ (max) (@VGS = 4.
5 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ± 10 V Drain current DC ID Pulse IDP 3.
2 A 6.
4 Drain power dissipation PD (Note 1) 500 mW Channel temperature Tch 150 °C ES6 1,2, 5, 6: Drain 3: Gate 4: Source Storage temperature Tstg −55 to 15...


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