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SSM5G09TU

Toshiba Semiconductor
Part Number SSM5G09TU
Manufacturer Toshiba Semiconductor
Description DC-DC Converter
Published Jul 21, 2010
Detailed Description SSM5G09TU Composite Devices Silicon P-Channel MOS (U-MOSIII)/Epitaxial Schottky Barrier SSM5G09TU 1. Applications • DC-D...
Datasheet PDF File SSM5G09TU PDF File

SSM5G09TU
SSM5G09TU

Overview
SSM5G09TU Composite Devices Silicon P-Channel MOS (U-MOSIII)/Epitaxial Schottky Barrier SSM5G09TU 1.
Applications • DC-DC Converters 2.
Features (1) Combined an P-channel MOSFET and a diode in one package.
(2) Low RDS(ON) and Low VF 2.
1.
MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 130 mΩ (max) (@VGS = -4.
0 V) RDS(ON) = 200 mΩ (max) (@VGS = -2.
5 V) 3.
Packaging and Internal Circuit 1: Gate 2: Source 3: Anode 4: Cathode 5: Drain UFV 4.
Absolute Maximum Ratings (Note) 4.
1.
Absolute Maximum Ratings of the MOSFET (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current Drain current (pulsed) Power ...


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