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SSM5G02TU

Toshiba Semiconductor
Part Number SSM5G02TU
Manufacturer Toshiba Semiconductor
Description DC-DC Converter
Published Jul 21, 2010
Detailed Description SSM5G02TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G02TU DC-DC Converter • Com...
Datasheet PDF File SSM5G02TU PDF File

SSM5G02TU
SSM5G02TU

Overview
SSM5G02TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G02TU DC-DC Converter • Combined Pch MOSFET and Schottky Diode into one Package.
• Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Symbol Rating Unit VDS −12 V VGSS ±12 V ID −1.
0 A IDP (Note 2) −2.
0 PD (Note 1) 0.
5 W t = 10s 0.
8 Tch 150 °C Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY DIODE Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge ...


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