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SSM3K7002BFU

Toshiba Semiconductor
Part Number SSM3K7002BFU
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Jul 21, 2010
Detailed Description SSM3K7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM3K7002BFU High-Speed Switching App...
Datasheet PDF File SSM3K7002BFU PDF File

SSM3K7002BFU
SSM3K7002BFU


Overview
SSM3K7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM3K7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON-resistance : RDS(ON) = 3.
3 Ω (max) (@VGS = 4.
5 V) : RDS(ON) = 2.
6 Ω (max) (@VGS = 5 V) : RDS(ON) = 2.
1 Ω (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ± 20 V Drain current DC Pulse ID 200 mA IDP 800 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads ...



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