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2SK3868

Toshiba Semiconductor
Part Number 2SK3868
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 7, 2010
Detailed Description www.DataSheet4U.com 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3868 Switching Re...
Datasheet PDF File 2SK3868 PDF File

2SK3868
2SK3868

Overview
www.
DataSheet4U.
com 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3868 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.
3 Ω (typ.
) High forward transfer admittance: |Yfs| = 3 S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.
5 150 -55 to 150 A W mJ A mJ °C °C Unit V V V Pulse (t = 1 ms) (Note 1) Drain p...


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