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2SK3863

Toshiba Semiconductor
Part Number 2SK3863
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 7, 2010
Detailed Description www.DataSheet4U.com 2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3863 Switching Re...
Datasheet PDF File 2SK3863 PDF File

2SK3863
2SK3863

Overview
www.
DataSheet4U.
com 2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3863 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.
35 Ω (typ.
) High forward transfer admittance: |Yfs| = 2.
8 S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 0.
95 MAX.
0.
6 ± 0.
15 Unit: mm 6.
8 MAX.
5.
2 ± 0.
2 1.
7 ± 0.
2 0.
6 MAX.
Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 40 180 5 4 150 -55 to 150 A W...


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