Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
V40100PG
New Product
Vishay General Semiconductor
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.420 V at IF = 5 A
FEATURES Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Component in accordanc...
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