P-Channel Silicon MOSFET General-Purpose Switching Device Applications
Description
Ordering number : ENA1655
SMP3003
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SANYO Semiconductors
DATA SHEET
SMP3003
Features
• • •
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance.
4V drive.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --75 ±20 --100 --400 90 150 --55 to +150 468 --60 Unit V V A A W °C °C mJ A
Note : *1 VDD=--48V, L=100μH, IAV=--60A *2 L≤100μH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=--1mA, VGS=0V VDS=--75V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA --1.
2 Ratings min --75 --10 ±10 --2.
6 typ max Unit V μA μA V
Marking : MP3003
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Any and all SANYO Semiconductor Co.
,Ltd.
products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.
).
The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.
) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof.
If you should intend to use our products for applications outside the standard ap...
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