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2SK3582TK

Part Number	2SK3582TK
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Jan 14, 2010
Detailed Description	2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM • Application for Ultra-com...
Datasheet	2SK3582TK PDF File

Overview

2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM • Application for Ultra-compact ECM 0.
22±0.
05 1.
2±0.
05 0.
8±0.
05 0.
32±0.
05 3 2 0.
1±0.
05 Unit: mm 0.
45 0.
45 1.
4±0.
05 Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA °C °C 0.
395±0.
03 mW 0.
9±0.
1 Absolute Maximum Ratings (Ta=25°C) 1 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly...

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