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C5352

Toshiba Semiconductor
Part Number C5352
Manufacturer Toshiba Semiconductor
Description 2SC5352
Published Dec 26, 2009
Detailed Description 2SC5352 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5352 Switching Regulator and High-Voltage Switching Appl...
Datasheet PDF File C5352 PDF File

C5352
C5352


Overview
2SC5352 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5352 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm • • Excellent switching times: tr = 0.
5 μs (max), tf = 0.
3 μs (max) (IC = 4 A) High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 400 7 10 15 5 80 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-16C1A Weight: 4...



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