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GT60M324

Part Number	GT60M324
Manufacturer	Toshiba
Description	Silicon N-Channel IGBT
Published	Sep 21, 2009
Detailed Description	GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resona...
Datasheet	GT60M324 PDF File

Overview

GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.
11μs (typ.
) (IC = 60A) FRD : trr = 0.
8μs (typ.
) (di/dt = −20 A/μs) • Low saturation voltage: VCE (sat) =1.
70V (typ.
) (IC = 60A) • High Junction temperature : Tj = 175℃ (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current Diode forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperat...

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