N-Channel Power MOSFET
Description
PD-90708D
IRFM044
POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number RDS(on)
IRFM044
0.
04
ID 35A*
60V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
Description
HEXFET MOSFET technology is the key to IR HiRel advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state resistance combined with high trans conductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heat sink.
This improves thermal efficiency and reduces drain capacitance.
TO-254AA
Features
Simple Drive Requirements Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light Weight
Absolute Maximum Ratings
Symbol
Parameter
ID1 @ VGS = 10V, TC = 25°C ID2 @ VGS = 10V, TC = 100°C
IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Continuous Drain Current Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package For Footnotes refer to the page 2.
Value 35* 28 180 125 1.
0 ± 20 340 35 12.
5 4.
5
-55 to + 150
300 (0.
063 in.
/1.
6 mm from case for
9.
3 (Typical)
Units
A
W W/°C
V mJ A mJ V/ns
°C
g
1
International Rectifier HiRel Products, Inc.
2021-04-30
IRFM044
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
BVDSS...
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