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MRF6S19120HR3

Freescale Semiconductor

RF Power Transistors


MRF6S19120HR3
MRF6S19120HR3

PDF File MRF6S19120HR3 PDF File


Description
Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev.
1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www.
datasheet4u.
com applications.
• Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 19 Watts Avg.
, Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.
2288 MHz.
PAR = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 15 dB Drain Efficiency — 21.
5% ACPR @ 885 kHz Offset — - 54 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19120HR3 MRF6S19120HSR3 1930 - 1990 MHz, 19 W AVG.
, 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S19120HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S19120HSR3 Table 1.
Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.
5, +68 - 0.
5, +12 407 2.
3 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 120 W...



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