Freescale Semiconductor Technical Data
MRF9080 Rev. 5, 12/2004
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large −signal, common − www.datasheet4u.com source amplifier applications in 26 volt base station e...
