SILICON POWER TRANSISTOR
Description
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD239/A/B/C
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DESCRIPTION With TO-220C package ·Complement to type BD240/A/B/C APPLICATIONS ·For medium power linear and switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER BD239 VCBO Collector-base voltage BD239A BD239B BD239C BD239 VCEO Collector-emitter voltage BD239A BD239B BD239C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 55 70 90 115 45 60 80 100 5 2 4 0.
6 30 150 -65~150 V A A A W V V UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD239/A/B/C
CHARACTERISTICS
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Tj=25
unless otherwise specified PARAMETER BD239 BD239A IC=30mA; IB=0 BD239B BD239C 80 100 IC=1 A;IB=0.
2 A IC=1A ; VCE=4V BD239/A VCE=30V; IB=0 0.
3 BD239B/C BD239 BD239A VCE=60V; IB=0 VCE=45V; VBE=0 VCE=60V; VBE=0 0.
2 BD239B BD239C VCE=80V; VBE=0 VCE=100V; VBE=0 VEB=5V; IC=0 IC=0.
2A ; VCE=4V IC=1A ; VCE=4V 40 15 1 mA mA mA 0.
7 1.
3 V V CONDITIONS MIN 45 60 V TYP.
MAX UNIT
SYMBOL
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat VBE
Collector-emitter saturation voltage Base-emitter on voltage
ICEO
Collector cut-off current
ICES
Collector cut-off current
IEBO hFE-1 hFE-2
Emitter cut-off current DC current gain DC current gain
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
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BD239/A/B/C
Fig.
2 Outline dimensions (unindicated tolerance:±0.
10 mm)
3
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