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HN7G09FE

Part Number	HN7G09FE
Manufacturer	Toshiba Semiconductor
Description	Power Management Switch Applications
Published	Feb 10, 2009
Detailed Description	HN7G09FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G09FE Unit: mm Power Management Switch Applications,...
Datasheet	HN7G09FE PDF File

Overview

HN7G09FE TOSHIBA Multichip Discrete Device www.
DataSheet4U.
com HN7G09FE Unit: mm Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Q1 (transistor): RN1104F equivalent Q2 (MOSFET): SSM3K15FS equivalent Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 10 100 Unit V V V mA Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage DC drain current DC Pulse Symbol VDS VGSS ID IDP Rating 20 ± 20 100 200 Unit V V mA 1.
2.
3.
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HN7G09FE Power Management Switch Applications - Toshiba Semiconductor

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