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HN7G01FU

Toshiba Semiconductor
Part Number HN7G01FU
Manufacturer Toshiba Semiconductor
Description Power Management Switch Application
Published Feb 10, 2009
Detailed Description HN7G01FU Preliminary www.DataSheet4U.com TOSHIBA Multi Chip Discrete Device HN7G01FU Unit: mm Power Management Switc...
Datasheet PDF File HN7G01FU PDF File

HN7G01FU
HN7G01FU

Overview
HN7G01FU Preliminary www.
DataSheet4U.
com TOSHIBA Multi Chip Discrete Device HN7G01FU Unit: mm Power Management Switch Application Driver Circuit Application Interface Circuit Application • • Q1 (transistor): 2SA1955 equivalent Q2 (MOS-FET): 2SK1830 equivalent Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −15 −12 −5 −400 −50 Unit V V V mA mA Q2 (MOS-FET) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA JEDEC JEITA TOSHIBA Wei...


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